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HGTP10N120BN

onsemi
HGTP10N120BN Preview
onsemi
IGBT 1200V 35A 298W TO220AB
$2.15
Available to order
Reference Price (USD)
800+
$1.87608
Exquisite packaging
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HGTP10N120BN

HGTP10N120BN

$2.15

Product details

General specs

  • Product Status: Last Time Buy
  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 35 A
  • Current - Collector Pulsed (Icm): 80 A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
  • Power - Max: 298 W
  • Switching Energy: 320µJ (on), 800µJ (off)
  • Input Type: Standard
  • Gate Charge: 100 nC
  • Td (on/off) @ 25°C: 23ns/165ns
  • Test Condition: 960V, 10A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3

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