FGH60T65SQD-F155
onsemi
onsemi
IGBT TRENCH/FS 650V 120A TO247-3
$7.10
Available to order
Reference Price (USD)
1+
$4.57000
10+
$4.12100
450+
$3.23576
900+
$2.91813
1,350+
$2.48352
Exquisite packaging
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FGH60T65SQD-F155
$7.10
Product details
Optimize your power electronics with the FGH60T65SQD-F155 single IGBT transistor from onsemi. This high-efficiency component is engineered to deliver superior switching performance and thermal management, ensuring long-term reliability in harsh operating conditions. The FGH60T65SQD-F155 is perfect for applications requiring precise control and high power handling, such as industrial motor drives, UPS systems, and solar inverters. Its low saturation voltage and fast switching speed minimize energy loss, improving overall system efficiency. Designed for easy integration, this IGBT transistor is a must-have for engineers seeking dependable power solutions. Discover how the FGH60T65SQD-F155 can enhance your next project request a quote now.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 120 A
- Current - Collector Pulsed (Icm): 240 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 60A
- Power - Max: 333 W
- Switching Energy: 227µJ (on), 100µJ (off)
- Input Type: Standard
- Gate Charge: 79 nC
- Td (on/off) @ 25°C: 20.8ns/102ns
- Test Condition: 400V, 15A, 4.7Ohm, 15V
- Reverse Recovery Time (trr): 34.6 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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