IKW30N60H3FKSA1
Infineon Technologies

Infineon Technologies
IGBT 600V 60A 187W TO247-3
$4.35
Available to order
Reference Price (USD)
1+
$4.82000
10+
$4.36100
240+
$3.62875
720+
$3.13493
1,200+
$2.69219
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Infineon Technologies IKW30N60H3FKSA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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Product details
The IKW30N60H3FKSA1 from Infineon Technologies is a high-performance single IGBT transistor designed for efficient power management in industrial applications. This discrete semiconductor product offers robust switching capabilities and thermal stability, making it ideal for demanding environments. With its advanced design, the IKW30N60H3FKSA1 ensures minimal energy loss and enhanced reliability, catering to a wide range of power electronics needs. Whether you're designing motor drives, power supplies, or renewable energy systems, this IGBT transistor delivers consistent performance under varying load conditions. Its compact form factor and ease of integration further simplify your design process. Explore the versatility of the IKW30N60H3FKSA1 and elevate your power management solutions today. For pricing and availability, submit an inquiry online.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
- Power - Max: 187 W
- Switching Energy: 1.38mJ
- Input Type: Standard
- Gate Charge: 165 nC
- Td (on/off) @ 25°C: 21ns/207ns
- Test Condition: 400V, 30A, 10.5Ohm, 15V
- Reverse Recovery Time (trr): 38 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-1