HGT1S7N60C3DS9A
Harris Corporation
Harris Corporation
14A, 600V, UFS N-CHANNEL IGBT W/
$2.09
Available to order
Reference Price (USD)
1+
$2.09000
500+
$2.0691
1000+
$2.0482
1500+
$2.0273
2000+
$2.0064
2500+
$1.9855
Exquisite packaging
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HGT1S7N60C3DS9A
$2.09
Product details
Upgrade your power electronics with the HGT1S7N60C3DS9A single IGBT transistor from Harris Corporation. This advanced component is engineered for high-efficiency switching in industrial motor drives, renewable energy systems, and medical equipment. The HGT1S7N60C3DS9A features low conduction losses and superior thermal performance, ensuring reliable operation in demanding conditions. Its fast switching speed and compatibility with various gate drivers make it a preferred choice for power designers. Whether you're working on high-power or precision applications, the HGT1S7N60C3DS9A delivers consistent performance. Contact us today for more details and pricing information.
General specs
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 14 A
- Current - Collector Pulsed (Icm): 56 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A
- Power - Max: 60 W
- Switching Energy: 165µJ (on), 600µJ (off)
- Input Type: Standard
- Gate Charge: 23 nC
- Td (on/off) @ 25°C: -
- Test Condition: 480V, 7A, 50Ohm, 15V
- Reverse Recovery Time (trr): 37 ns
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB
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