FGAF40N60SMD
onsemi

onsemi
IGBT FIELD STOP 600V 80A TO3PF
$5.26
Available to order
Reference Price (USD)
1+
$4.84000
10+
$4.34800
360+
$3.37994
720+
$3.03282
1,080+
$2.55780
Exquisite packaging
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Product details
Optimize your power electronics with the FGAF40N60SMD single IGBT transistor from onsemi. This high-efficiency component is engineered to deliver superior switching performance and thermal management, ensuring long-term reliability in harsh operating conditions. The FGAF40N60SMD is perfect for applications requiring precise control and high power handling, such as industrial motor drives, UPS systems, and solar inverters. Its low saturation voltage and fast switching speed minimize energy loss, improving overall system efficiency. Designed for easy integration, this IGBT transistor is a must-have for engineers seeking dependable power solutions. Discover how the FGAF40N60SMD can enhance your next project request a quote now.
General specs
- Product Status: Active
- IGBT Type: Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
- Power - Max: 115 W
- Switching Energy: 870µJ (on), 260µJ (off)
- Input Type: Standard
- Gate Charge: 119 nC
- Td (on/off) @ 25°C: 12ns/92ns
- Test Condition: 400V, 40A, 6Ohm, 15V
- Reverse Recovery Time (trr): 36 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3 Full Pack
- Supplier Device Package: TO-3PF