IKP10N60TXKSA1
Infineon Technologies
Infineon Technologies
IGBT 600V 20A 110W TO220-3
$2.16
Available to order
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$2.19000
10+
$1.97100
100+
$1.58410
500+
$1.30150
1,000+
$1.07839
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IKP10N60TXKSA1
$2.16
Product details
Upgrade your power electronics with the IKP10N60TXKSA1 single IGBT transistor from Infineon Technologies. This advanced component is engineered for high-efficiency switching in industrial motor drives, renewable energy systems, and medical equipment. The IKP10N60TXKSA1 features low conduction losses and superior thermal performance, ensuring reliable operation in demanding conditions. Its fast switching speed and compatibility with various gate drivers make it a preferred choice for power designers. Whether you're working on high-power or precision applications, the IKP10N60TXKSA1 delivers consistent performance. Contact us today for more details and pricing information.
General specs
- Product Status: Active
- IGBT Type: NPT, Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 20 A
- Current - Collector Pulsed (Icm): 30 A
- Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 10A
- Power - Max: 110 W
- Switching Energy: 430µJ
- Input Type: Standard
- Gate Charge: 62 nC
- Td (on/off) @ 25°C: 12ns/215ns
- Test Condition: 400V, 10A, 23Ohm, 15V
- Reverse Recovery Time (trr): 115 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: PG-TO220-3-1
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