PDTA144EMB,315
NXP USA Inc.
NXP USA Inc.
NOW NEXPERIA PDTA144EMB - SMALL
$0.02
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Reference Price (USD)
10,000+
$0.04590
Exquisite packaging
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PDTA144EMB,315
$0.02
Product details
The PDTA144EMB,315 from NXP USA Inc. revolutionizes compact circuit design with its pre-configured bipolar transistor solution. Integrating base-emitter resistors on-die, this BJT maintains stable biasing against supply voltage fluctuations. It shines in energy harvesting systems, wireless charging circuits, and HMI touch controllers. The device's low-profile DFN package enables thermal vias for improved heat dissipation in dense layouts. Characterized by ultra-low popcorn noise, it's ideal for sensitive measurement equipment. Automotive-qualified options are available for under-hood electronics. Reduce development cycles with this application-ready component use our live chat feature for immediate technical support on PDTA144EMB,315 integration.
General specs
- Product Status: Active
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 47 kOhms
- Resistor - Emitter Base (R2): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: 180 MHz
- Power - Max: 250 mW
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: DFN1006B-3
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