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MUN5134T1G

onsemi
MUN5134T1G Preview
onsemi
TRANS PREBIAS PNP 202MW SC70-3
$0.03
Available to order
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MUN5134T1G

MUN5134T1G

$0.03

Product details

The MUN5134T1G from onsemi revolutionizes compact circuit design with its pre-configured bipolar transistor solution. Integrating base-emitter resistors on-die, this BJT maintains stable biasing against supply voltage fluctuations. It shines in energy harvesting systems, wireless charging circuits, and HMI touch controllers. The device's low-profile DFN package enables thermal vias for improved heat dissipation in dense layouts. Characterized by ultra-low popcorn noise, it's ideal for sensitive measurement equipment. Automotive-qualified options are available for under-hood electronics. Reduce development cycles with this application-ready component use our live chat feature for immediate technical support on MUN5134T1G integration.

General specs

  • Product Status: Active
  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1): 22 kOhms
  • Resistor - Emitter Base (R2): 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 202 mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70-3 (SOT323)

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