BUK753R5-60E,127
NXP USA Inc.
NXP USA Inc.
MOSFET N-CH 60V 120A TO220AB
$0.93
Available to order
Reference Price (USD)
1+
$0.93000
500+
$0.9207
1000+
$0.9114
1500+
$0.9021
2000+
$0.8928
2500+
$0.8835
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BUK753R5-60E,127
$0.93
Product details
General specs
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8920 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 293W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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