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IPW90R500C3XKSA1

Infineon Technologies
IPW90R500C3XKSA1 Preview
Infineon Technologies
MOSFET N-CH 900V 11A TO247-3
$5.66
Available to order
Reference Price (USD)
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$5.66000
500+
$5.6034
1000+
$5.5468
1500+
$5.4902
2000+
$5.4336
2500+
$5.377
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Infineon Technologies IPW90R500C3XKSA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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IPW90R500C3XKSA1

IPW90R500C3XKSA1

$5.66

Product details

The IPW90R500C3XKSA1 from Infineon Technologies is a high-performance single MOSFET transistor designed for efficient power management in various electronic applications. This Discrete Semiconductor Product belongs to the Transistors - FETs, MOSFETs - Single category, offering reliable switching capabilities and low power dissipation. Ideal for both industrial and consumer electronics, this component ensures optimal performance in demanding environments. With its advanced design, the IPW90R500C3XKSA1 provides enhanced thermal stability and durability, making it a preferred choice for engineers and designers. Whether you're developing power supplies, motor controls, or audio amplifiers, this MOSFET delivers consistent results. Key features include fast switching speeds, low on-resistance, and excellent thermal characteristics. These attributes contribute to improved energy efficiency and reduced heat generation in your circuits. The IPW90R500C3XKSA1 finds applications in automotive systems, renewable energy solutions, and industrial automation equipment. For power inverters, battery management systems, or LED drivers, this component offers the reliability you need. Upgrade your designs with the IPW90R500C3XKSA1 and experience superior performance. Contact us today for pricing and availability submit your inquiry online to get started!

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 740µA
  • Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 100 V
  • FET Feature: -
  • Power Dissipation (Max): 156W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-3-21
  • Package / Case: TO-247-3

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