BLF7G20LS-90P,112
NXP USA Inc.
NXP USA Inc.
RF PFET, 2-ELEMENT, L BAND, SILI
$68.11
Available to order
Reference Price (USD)
60+
$71.15767
Exquisite packaging
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BLF7G20LS-90P,112
$68.11
Product details
The BLF7G20LS-90P,112 by NXP USA Inc. is a high-performance RF MOSFET transistor for discrete semiconductor products. This transistor is tailored for RF amplification, offering outstanding signal clarity and efficiency. Its advanced FET technology provides low noise and high gain, essential for sensitive applications. The BLF7G20LS-90P,112 excels in power handling and thermal management, ensuring long-term reliability. With superior linearity and switching speed, it is ideal for high-frequency designs. The compact and sturdy construction allows for easy circuit integration. It is designed to perform consistently in both commercial and industrial settings. Key features include minimal distortion, fast response times, and excellent impedance matching. These qualities make the BLF7G20LS-90P,112 perfect for wireless communication devices, satellite systems, and defense electronics. It is also well-suited for medical instrumentation, automotive radar, and industrial sensors. The BLF7G20LS-90P,112 delivers precise and stable signal processing across all applications. NXP USA Inc. has produced this MOSFET to meet the highest standards. For reliable RF performance, the BLF7G20LS-90P,112 is a premier choice. Advance your electronic projects with this top-tier transistor. Contact us for more information or submit an online inquiry today. Select the BLF7G20LS-90P,112 from NXP USA Inc. for unmatched RF quality.
General specs
- Product Status: Active
- Transistor Type: LDMOS (Dual), Common Source
- Frequency: 2.11GHz ~ 2.17GHz
- Gain: 19.5dB
- Voltage - Test: 28 V
- Current Rating (Amps): 2µA
- Noise Figure: -
- Current - Test: 550 mA
- Power - Output: 90W
- Voltage - Rated: 65 V
- Package / Case: SOT-1121B
- Supplier Device Package: LDMOST
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