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MRFG35002N6T1

Freescale Semiconductor
MRFG35002N6T1 Preview
Freescale Semiconductor
RF C BAND, GALLIUM ARSENIDE, N-C
$10.20
Available to order
Reference Price (USD)
1,000+
$6.22350
Exquisite packaging
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MRFG35002N6T1

MRFG35002N6T1

$10.20

Product details

The MRFG35002N6T1 by Freescale Semiconductor is a high-performance RF MOSFET transistor for discrete semiconductor products. This transistor is tailored for RF amplification, offering outstanding signal clarity and efficiency. Its advanced FET technology provides low noise and high gain, essential for sensitive applications. The MRFG35002N6T1 excels in power handling and thermal management, ensuring long-term reliability. With superior linearity and switching speed, it is ideal for high-frequency designs. The compact and sturdy construction allows for easy circuit integration. It is designed to perform consistently in both commercial and industrial settings. Key features include minimal distortion, fast response times, and excellent impedance matching. These qualities make the MRFG35002N6T1 perfect for wireless communication devices, satellite systems, and defense electronics. It is also well-suited for medical instrumentation, automotive radar, and industrial sensors. The MRFG35002N6T1 delivers precise and stable signal processing across all applications. Freescale Semiconductor has produced this MOSFET to meet the highest standards. For reliable RF performance, the MRFG35002N6T1 is a premier choice. Advance your electronic projects with this top-tier transistor. Contact us for more information or submit an online inquiry today. Select the MRFG35002N6T1 from Freescale Semiconductor for unmatched RF quality.

General specs

  • Product Status: Active
  • Transistor Type: pHEMT FET
  • Frequency: 3.55GHz
  • Gain: 10dB
  • Voltage - Test: 6 V
  • Current Rating (Amps): -
  • Noise Figure: -
  • Current - Test: 65 mA
  • Power - Output: 1.5W
  • Voltage - Rated: 8 V
  • Package / Case: PLD-1.5
  • Supplier Device Package: PLD-1.5

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