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BLF6G20LS-180RN112

NXP USA Inc.
BLF6G20LS-180RN112 Preview
NXP USA Inc.
RF POWER TRANSISTORS
$78.18
Available to order
Reference Price (USD)
1+
$78.18000
500+
$77.3982
1000+
$76.6164
1500+
$75.8346
2000+
$75.0528
2500+
$74.271
Exquisite packaging
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NXP USA Inc. BLF6G20LS-180RN112 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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BLF6G20LS-180RN112

BLF6G20LS-180RN112

$78.18

Product details

Elevate your RF designs with NXP USA Inc.'s BLF6G20LS-180RN112 bipolar junction transistor, a premium choice in discrete semiconductor components. This BJT features exceptional gain flatness across wide bandwidths, making it ideal for multi-channel communication systems. Its advanced surface treatment process reduces recombination losses while improving high-frequency response. The transistor offers excellent parameter consistency with tight production tolerances for predictable performance. Key application areas include phased array radar systems requiring precise amplitude and phase matching. Commercial wireless applications span LTE-Advanced and 5G NR small cell power amplifiers. In industrial settings, it enables reliable operation in RFID readers and wireless process monitoring equipment. The medical diagnostics sector benefits from its low-noise characteristics in portable ultrasound imaging devices. The BLF6G20LS-180RN112 also supports critical functions in electronic countermeasure systems and spectrum monitoring equipment. Its versatile packaging options accommodate various heat sinking requirements and PCB mounting configurations. NXP USA Inc. backs this product with extensive reliability testing including HTOL and ESD robustness verification. Access our online design center for simulation models and reference circuit layouts. Our application engineers are available to provide technical guidance on impedance matching networks and stability analysis. Contact us today to discuss your project requirements and receive competitive pricing for the BLF6G20LS-180RN112 RF transistor series.

General specs

  • Product Status: Active
  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -

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