BLF10H6600P112
NXP USA Inc.
NXP USA Inc.
POWER LDMOS TRANSISTOR, SOT539 (
$220.03
Available to order
Reference Price (USD)
1+
$220.03000
500+
$217.8297
1000+
$215.6294
1500+
$213.4291
2000+
$211.2288
2500+
$209.0285
Exquisite packaging
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BLF10H6600P112
$220.03
Product details
The BLF10H6600P112 by NXP USA Inc. is a top-tier Bipolar Junction Transistor (BJT) in the Transistors - Bipolar (BJT) - Single subcategory. This discrete semiconductor product excels in amplification and switching roles across various electronic circuits. With its superior current handling capacity and fast response times, the BLF10H6600P112 ensures smooth operation in demanding environments. The transistor's low leakage current and high breakdown voltage contribute to its exceptional performance. Engineers appreciate its consistent characteristics batch after batch, enabling predictable circuit behavior. Typical applications include motor control systems, LED drivers, and RF modules. Medical devices, telecommunications equipment, and renewable energy systems also leverage this BJT's capabilities. The BLF10H6600P112 is RoHS compliant and manufactured using advanced quality control processes. Its lead-free construction aligns with modern environmental standards. For professionals seeking reliable single BJT transistors, the BLF10H6600P112 delivers outstanding value. Visit our website or submit an inquiry to learn more about purchasing options and volume discounts.
General specs
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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