KSC10080BU
Fairchild Semiconductor
Fairchild Semiconductor
KSC1008OBU - NPN EPITACIAL SILIC
$0.02
Available to order
Reference Price (USD)
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$0.02080
500+
$0.020592
1000+
$0.020384
1500+
$0.020176
2000+
$0.019968
2500+
$0.01976
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Fairchild Semiconductor KSC10080BU is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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KSC10080BU
$0.02
Product details
Upgrade your electronic designs with the KSC10080BU, a high-reliability Bipolar Junction Transistor from Fairchild Semiconductor. This single BJT in the Discrete Semiconductor Products range offers exceptional linear amplification characteristics for precision analog circuits. The device features low harmonic distortion and excellent phase response, making it ideal for audio and instrumentation applications. Its robust construction withstands electrical stress and thermal cycling without performance degradation. The KSC10080BU demonstrates consistent current gain across its operating range, simplifying circuit stabilization. Common uses include microphone preamplifiers, medical monitoring equipment, and precision voltage references. Broadcast systems, laboratory instruments, and high-end audio components benefit from this transistor's clean signal reproduction. Fairchild Semiconductor subjects each KSC10080BU unit to comprehensive electrical testing before shipment. The transistor's lead frame design optimizes thermal dissipation in high-duty-cycle applications. With its combination of technical excellence and manufacturing quality, the KSC10080BU delivers outstanding value. Contact our sales team through the website inquiry form to discuss your specific requirements and procurement options.
General specs
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 700 mA
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 2V
- Power - Max: 800 mW
- Frequency - Transition: 50MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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