BFU660F,115
NXP USA Inc.
NXP USA Inc.
RF TRANS NPN 5.5V 21GHZ 4DFP
$0.67
Available to order
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3,000+
$0.20686
6,000+
$0.19351
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$0.18016
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$0.17794
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BFU660F,115
$0.67
Product details
Discover unparalleled RF performance with NXP USA Inc.'s BFU660F,115 bipolar junction transistor, a standout in discrete semiconductor solutions. This BJT features exceptional high-frequency response characteristics, making it perfect for sensitive signal detection and amplification circuits. The transistor's optimized base-emitter junction design ensures low noise operation while delivering substantial power gain. Its robust construction withstands mechanical stress and thermal cycling common in field deployments. The BFU660F,115 demonstrates excellent intermodulation distortion characteristics for clean signal reproduction. Telecommunications equipment manufacturers utilize this component in fiber optic network repeaters and microwave backhaul systems. Aerospace applications include flight communication systems and terrain-following radar implementations. In scientific research, it enables precise signal processing in nuclear magnetic resonance (NMR) spectrometers and electron microscopy controls. The consumer electronics sector benefits from its reliable performance in smart antenna systems and millimeter-wave devices. With multiple packaging options available, the BFU660F,115 adapts to various PCB layout requirements and thermal management schemes. NXP USA Inc. supports this product with comprehensive reliability data and failure mode analysis reports. Design teams can leverage our application engineering expertise for custom circuit optimization advice. Explore sample availability and lead time information through our online portal. Submit your project specifications today to receive a competitive quote for the BFU660F,115 RF transistor solution.
General specs
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 5.5V
- Frequency - Transition: 21GHz
- Noise Figure (dB Typ @ f): 0.6dB ~ 1.2dB @ 1.5GHz ~ 5.8GHz
- Gain: 12dB ~ 21dB
- Power - Max: 225mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 10mA, 2V
- Current - Collector (Ic) (Max): 60mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-343F
- Supplier Device Package: 4-DFP
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