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NESG340034-T1-A

Renesas Electronics America Inc
NESG340034-T1-A Preview
Renesas Electronics America Inc
RF BIPOLAR TRANSISTOR
$0.51
Available to order
Reference Price (USD)
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$0.51000
500+
$0.5049
1000+
$0.4998
1500+
$0.4947
2000+
$0.4896
2500+
$0.4845
Exquisite packaging
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Renesas Electronics America Inc NESG340034-T1-A is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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NESG340034-T1-A

NESG340034-T1-A

$0.51

Product details

Elevate your RF designs with Renesas Electronics America Inc's NESG340034-T1-A bipolar junction transistor, a premium choice in discrete semiconductor components. This BJT features exceptional gain flatness across wide bandwidths, making it ideal for multi-channel communication systems. Its advanced surface treatment process reduces recombination losses while improving high-frequency response. The transistor offers excellent parameter consistency with tight production tolerances for predictable performance. Key application areas include phased array radar systems requiring precise amplitude and phase matching. Commercial wireless applications span LTE-Advanced and 5G NR small cell power amplifiers. In industrial settings, it enables reliable operation in RFID readers and wireless process monitoring equipment. The medical diagnostics sector benefits from its low-noise characteristics in portable ultrasound imaging devices. The NESG340034-T1-A also supports critical functions in electronic countermeasure systems and spectrum monitoring equipment. Its versatile packaging options accommodate various heat sinking requirements and PCB mounting configurations. Renesas Electronics America Inc backs this product with extensive reliability testing including HTOL and ESD robustness verification. Access our online design center for simulation models and reference circuit layouts. Our application engineers are available to provide technical guidance on impedance matching networks and stability analysis. Contact us today to discuss your project requirements and receive competitive pricing for the NESG340034-T1-A RF transistor series.

General specs

  • Product Status: Active
  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -

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