AFT18S230SR3
NXP USA Inc.
NXP USA Inc.
FET RF 65V 1.88GHZ NI780S-6
$188.19
Available to order
Reference Price (USD)
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$188.19000
500+
$186.3081
1000+
$184.4262
1500+
$182.5443
2000+
$180.6624
2500+
$178.7805
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AFT18S230SR3
$188.19
Product details
Maximize your RF capabilities with the AFT18S230SR3 RF MOSFET transistor from NXP USA Inc., a leader in discrete semiconductor products. This high-frequency transistor is designed for exceptional amplification and signal fidelity. Its advanced FET technology ensures minimal noise and maximum efficiency. The AFT18S230SR3 handles high power levels with outstanding thermal management. With high gain and linearity, it is perfect for demanding RF circuits. The transistor's durable construction guarantees reliability in harsh conditions. Its compact size allows for seamless integration into various electronic systems. The AFT18S230SR3 is ideal for applications requiring stable and efficient RF performance. Key benefits include fast switching, low signal loss, and high impedance matching. These features make it suitable for use in 5G networks, satellite communication, and defense electronics. It is also effective in consumer devices, automotive systems, and industrial monitoring. The AFT18S230SR3 ensures consistent operation across a wide frequency range. NXP USA Inc. has engineered this MOSFET to surpass industry standards. For cutting-edge RF technology, the AFT18S230SR3 is an excellent choice. Enhance your designs with this high-performance transistor. Request a quote or submit an inquiry online now. Rely on the AFT18S230SR3 from NXP USA Inc. for superior RF solutions.
General specs
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 1.88GHz
- Gain: 19dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 1.8 A
- Power - Output: 50W
- Voltage - Rated: 65 V
- Package / Case: NI-780S
- Supplier Device Package: NI-780S
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