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PD55008TR-E

STMicroelectronics
PD55008TR-E Preview
STMicroelectronics
TRANSISTOR RF POWERSO-10
$14.74
Available to order
Reference Price (USD)
600+
$10.84600
Exquisite packaging
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PD55008TR-E

PD55008TR-E

$14.74

Product details

Maximize your RF capabilities with the PD55008TR-E RF MOSFET transistor from STMicroelectronics, a leader in discrete semiconductor products. This high-frequency transistor is designed for exceptional amplification and signal fidelity. Its advanced FET technology ensures minimal noise and maximum efficiency. The PD55008TR-E handles high power levels with outstanding thermal management. With high gain and linearity, it is perfect for demanding RF circuits. The transistor's durable construction guarantees reliability in harsh conditions. Its compact size allows for seamless integration into various electronic systems. The PD55008TR-E is ideal for applications requiring stable and efficient RF performance. Key benefits include fast switching, low signal loss, and high impedance matching. These features make it suitable for use in 5G networks, satellite communication, and defense electronics. It is also effective in consumer devices, automotive systems, and industrial monitoring. The PD55008TR-E ensures consistent operation across a wide frequency range. STMicroelectronics has engineered this MOSFET to surpass industry standards. For cutting-edge RF technology, the PD55008TR-E is an excellent choice. Enhance your designs with this high-performance transistor. Request a quote or submit an inquiry online now. Rely on the PD55008TR-E from STMicroelectronics for superior RF solutions.

General specs

  • Product Status: Active
  • Transistor Type: LDMOS
  • Frequency: 500MHz
  • Gain: 17dB
  • Voltage - Test: 12.5 V
  • Current Rating (Amps): 4A
  • Noise Figure: -
  • Current - Test: 150 mA
  • Power - Output: 8W
  • Voltage - Rated: 40 V
  • Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
  • Supplier Device Package: PowerSO-10RF (Formed Lead)

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