NTE2356
NTE Electronics, Inc
NTE Electronics, Inc
T-PNP SI W/10K RESISTOR
$1.76
Available to order
Reference Price (USD)
1+
$1.76000
500+
$1.7424
1000+
$1.7248
1500+
$1.7072
2000+
$1.6896
2500+
$1.672
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NTE2356
$1.76
Product details
The NTE2356 from NTE Electronics, Inc is a high-performance Bipolar Junction Transistor (BJT) designed for precision applications. This pre-biased single transistor offers reliable switching and amplification, making it ideal for low-power circuits. With optimized thermal performance and consistent operation, it ensures stability in various electronic designs. The compact form factor and robust construction cater to modern PCB layouts. Key features include integrated bias resistors for simplified circuit design, low saturation voltage for energy efficiency, and high current gain for enhanced signal processing. Typical applications include automotive control modules, IoT sensor interfaces, and portable medical devices. Upgrade your projects with the NTE2356 submit your inquiry today for bulk pricing and datasheets.
General specs
- Product Status: Active
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 10 kOhms
- Resistor - Emitter Base (R2): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200 MHz
- Power - Max: 300 mW
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Short Body
- Supplier Device Package: TO-92S
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