RN1112(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PREBIAS NPN 50V 0.1A SSM
$0.22
Available to order
Reference Price (USD)
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$0.22000
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$0.2178
1000+
$0.2156
1500+
$0.2134
2000+
$0.2112
2500+
$0.209
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RN1112(TE85L,F)
$0.22
Product details
The RN1112(TE85L,F) from Toshiba Semiconductor and Storage is a high-performance Bipolar Junction Transistor (BJT) designed for precision applications. This pre-biased single transistor offers reliable switching and amplification, making it ideal for low-power circuits. With optimized thermal performance and consistent operation, it ensures stability in various electronic designs. The compact form factor and robust construction cater to modern PCB layouts. Key features include integrated bias resistors for simplified circuit design, low saturation voltage for energy efficiency, and high current gain for enhanced signal processing. Typical applications include automotive control modules, IoT sensor interfaces, and portable medical devices. Upgrade your projects with the RN1112(TE85L,F) submit your inquiry today for bulk pricing and datasheets.
General specs
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 22 kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250 MHz
- Power - Max: 100 mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SSM
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