PUMD6,115
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PREBIAS 1NPN 1PNP 6TSSOP
$0.30
Available to order
Reference Price (USD)
3,000+
$0.05175
6,000+
$0.04500
15,000+
$0.03825
30,000+
$0.03600
75,000+
$0.03375
150,000+
$0.03150
Exquisite packaging
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PUMD6,115
$0.30
Product details
The PUMD6,115 by Nexperia USA Inc. is a high-quality pre-biased bipolar junction transistor (BJT) array, categorized under Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased. This product is designed to provide exceptional performance in various electronic applications, ensuring reliability and efficiency. The PUMD6,115 features integrated pre-biasing, which minimizes external components and simplifies design. Its excellent thermal stability guarantees consistent operation under diverse conditions. This BJT array is ideal for applications such as signal amplification, load switching, and interface circuits. The PUMD6,115 is also widely used in industrial automation, consumer electronics, and telecommunications. With its high gain and low noise performance, it is perfect for sensitive and precision-driven tasks. The compact and durable design of the PUMD6,115 makes it suitable for both high-volume and specialized applications. Engineers and designers can rely on this transistor array for its consistent quality and performance. For more information on the PUMD6,115 and to receive a customized quote, please submit an inquiry and our team will respond promptly.
General specs
- Product Status: Active
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 4.7kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
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