MUN5211DW1T1G
onsemi
onsemi
TRANS PREBIAS 2NPN 50V SC88
$0.29
Available to order
Reference Price (USD)
3,000+
$0.04334
6,000+
$0.03789
15,000+
$0.03244
30,000+
$0.03062
75,000+
$0.02880
150,000+
$0.02578
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
onsemi MUN5211DW1T1G is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
MUN5211DW1T1G
$0.29
Product details
Enhance your electronic designs with the MUN5211DW1T1G from onsemi, a premium pre-biased bipolar junction transistor (BJT) array. This product falls under the Discrete Semiconductor Products category, specifically Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The MUN5211DW1T1G is engineered to deliver superior performance in amplification and switching tasks, offering unmatched reliability and efficiency. Its pre-biased configuration simplifies circuit design, reducing the need for additional components. The transistor array features excellent thermal management, ensuring stable operation under varying conditions. Ideal for use in power management systems, audio amplifiers, and sensor interfaces, the MUN5211DW1T1G provides consistent results. Its high gain and low noise characteristics make it a preferred choice for sensitive applications. The MUN5211DW1T1G is also commonly used in medical devices, telecommunications equipment, and home automation systems. With its durable design and long lifespan, this BJT array is a cost-effective solution for demanding environments. To learn more about how the MUN5211DW1T1G can benefit your project, contact us for a detailed quote and technical support.
General specs
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-88/SC70-6/SOT-363
Viewed products
