PRMH10Z
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PREBIAS 2NPN 50V DFN1412-6
$0.37
Available to order
Reference Price (USD)
5,000+
$0.05060
10,000+
$0.04301
25,000+
$0.04048
50,000+
$0.03795
125,000+
$0.03289
Exquisite packaging
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PRMH10Z
$0.37
Product details
Discover the PRMH10Z from Nexperia USA Inc., a top-tier pre-biased bipolar junction transistor (BJT) array in the Discrete Semiconductor Products category, specifically Transistors - Bipolar (BJT) - Arrays, Pre-Biased. This product is engineered for optimal performance in amplification and switching applications, offering high reliability and efficiency. The PRMH10Z features built-in pre-biasing, which simplifies circuit design and enhances performance. Its superior thermal characteristics ensure stable operation across a wide temperature range. Ideal for use in automotive control modules, audio equipment, and power management systems, the PRMH10Z delivers consistent and precise results. The transistor array is also commonly found in aerospace electronics, security systems, and wearable technology. With its high gain and low power consumption, the PRMH10Z is perfect for energy-sensitive applications. The robust construction and long-term durability of this BJT array make it a smart investment for any project. To explore how the PRMH10Z can meet your specific requirements, request a quote today and our experts will assist you promptly.
General specs
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 2.2kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA
- Frequency - Transition: 230MHz
- Power - Max: 480mW
- Mounting Type: Surface Mount
- Package / Case: 6-XFDFN Exposed Pad
- Supplier Device Package: DFN1412-6
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