NSVMUN5334DW1T1G
onsemi
onsemi
TRANS PREBIAS 1NPN 1PNP 50V SC88
$0.41
Available to order
Reference Price (USD)
3,000+
$0.10112
6,000+
$0.09550
15,000+
$0.08707
30,000+
$0.08145
75,000+
$0.07490
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NSVMUN5334DW1T1G
$0.41
Product details
The NSVMUN5334DW1T1G by onsemi is a state-of-the-art pre-biased bipolar junction transistor (BJT) array, part of the Discrete Semiconductor Products line under Transistors - Bipolar (BJT) - Arrays, Pre-Biased. This product is crafted to meet the demands of advanced electronic applications, offering high efficiency and dependability. The NSVMUN5334DW1T1G features integrated pre-biasing, which optimizes circuit design and reduces component count. Its superior thermal performance ensures reliable operation in varying conditions. This BJT array is perfect for applications like motor drives, LED lighting, and power management. The NSVMUN5334DW1T1G is also widely used in renewable energy solutions, industrial controls, and communication devices. With its high gain and low saturation voltage, it is ideal for precision applications. The compact and rugged design of the NSVMUN5334DW1T1G makes it suitable for both commercial and industrial use. Engineers seeking a high-performance transistor array will find the NSVMUN5334DW1T1G to be an excellent solution. Submit your inquiry today to receive detailed information on pricing and availability tailored to your needs.
General specs
- Product Status: Active
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 22kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-88/SC70-6/SOT-363
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