PEMH16,115
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PREBIAS 2NPN 50V SOT666
$0.08
Available to order
Reference Price (USD)
4,000+
$0.06831
Exquisite packaging
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PEMH16,115
$0.08
Product details
Explore the PEMH16,115 from Nexperia USA Inc., a premium pre-biased bipolar junction transistor (BJT) array in the Discrete Semiconductor Products category, specifically Transistors - Bipolar (BJT) - Arrays, Pre-Biased. This product is designed for superior performance in amplification and switching applications, delivering unmatched reliability and efficiency. The PEMH16,115 features built-in pre-biasing, simplifying circuit design and improving functionality. Its excellent thermal properties ensure stable operation across a broad temperature range. Ideal for automotive electronics, audio systems, and power supplies, the PEMH16,115 provides consistent and precise performance. This transistor array is also commonly found in aerospace applications, security systems, and wearable devices. With high gain and low power consumption, the PEMH16,115 is perfect for energy-sensitive designs. The durable and compact construction of this BJT array makes it a cost-effective choice for various projects. To discover how the PEMH16,115 can meet your specific needs, request a quote today and our specialists will provide you with comprehensive support.
General specs
- Product Status: Not For New Designs
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 22kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-666
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