EMH4FHAT2R
Rohm Semiconductor
Rohm Semiconductor
NPN+NPN DIGITAL TRANSISTOR (CORR
$0.38
Available to order
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$0.38000
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$0.3762
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$0.3724
1500+
$0.3686
2000+
$0.3648
2500+
$0.361
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EMH4FHAT2R
$0.38
Product details
Enhance your electronic designs with the EMH4FHAT2R from Rohm Semiconductor, a premium pre-biased bipolar junction transistor (BJT) array. This product falls under the Discrete Semiconductor Products category, specifically Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The EMH4FHAT2R is engineered to deliver superior performance in amplification and switching tasks, offering unmatched reliability and efficiency. Its pre-biased configuration simplifies circuit design, reducing the need for additional components. The transistor array features excellent thermal management, ensuring stable operation under varying conditions. Ideal for use in power management systems, audio amplifiers, and sensor interfaces, the EMH4FHAT2R provides consistent results. Its high gain and low noise characteristics make it a preferred choice for sensitive applications. The EMH4FHAT2R is also commonly used in medical devices, telecommunications equipment, and home automation systems. With its durable design and long lifespan, this BJT array is a cost-effective solution for demanding environments. To learn more about how the EMH4FHAT2R can benefit your project, contact us for a detailed quote and technical support.
General specs
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: EMT6
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