Shopping cart

Subtotal: $0.00

PEMD24,115

Nexperia USA Inc.
PEMD24,115 Preview
Nexperia USA Inc.
TRANS PREBIAS 1NPN 1PNP SOT666
$0.08
Available to order
Reference Price (USD)
4,000+
$0.06831
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Nexperia USA Inc. PEMD24,115 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
PEMD24,115

PEMD24,115

$0.08

Product details

Upgrade your electronic projects with the PEMD24,115 from Nexperia USA Inc., a superior pre-biased bipolar junction transistor (BJT) array. This product belongs to the Discrete Semiconductor Products category, specifically Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The PEMD24,115 is designed to deliver high performance in amplification and switching tasks, offering reliability and efficiency. Its pre-biased configuration reduces circuit complexity and enhances functionality. The transistor array boasts excellent thermal management, ensuring stable performance in various environments. Perfect for use in power converters, audio amplifiers, and sensor circuits, the PEMD24,115 provides consistent and accurate results. It is also commonly utilized in automotive electronics, medical devices, and smart home systems. With its high gain and low power consumption, the PEMD24,115 is ideal for energy-efficient applications. The robust and compact design of this BJT array makes it a versatile choice for diverse projects. To learn more about the PEMD24,115 and how it can benefit your designs, contact us for a detailed quote and expert advice.

General specs

  • Product Status: Not For New Designs
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 20mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 100kOhms
  • Resistor - Emitter Base (R2): 100kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: -
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-666

Viewed products

Rohm Semiconductor

IMH11AT110

$0.00 (not set)
onsemi

EMC2DXV5T1

$0.00 (not set)
onsemi

NSBC114EPDP6T5G

$0.00 (not set)
Nexperia USA Inc.

PUMB10F

$0.00 (not set)
NXP USA Inc.

PEMB15,115

$0.00 (not set)
Toshiba Semiconductor and Storage

RN4907,LXHF(CT

$0.00 (not set)
onsemi

NSBC143EDXV6T1G

$0.00 (not set)
Toshiba Semiconductor and Storage

RN2908FE(TE85L,F)

$0.00 (not set)
Rohm Semiconductor

EMB75T2R

$0.00 (not set)
Diodes Incorporated

DDA143TU-7

$0.00 (not set)
Top