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RN2908FE(TE85L,F)

Toshiba Semiconductor and Storage
RN2908FE(TE85L,F) Preview
Toshiba Semiconductor and Storage
TRANS 2PNP PREBIAS 0.1W ES6
$0.35
Available to order
Reference Price (USD)
4,000+
$0.06510
8,000+
$0.05859
12,000+
$0.05208
28,000+
$0.04883
100,000+
$0.04340
Exquisite packaging
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Toshiba Semiconductor and Storage RN2908FE(TE85L,F) is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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RN2908FE(TE85L,F)

RN2908FE(TE85L,F)

$0.35

Product details

Discover the RN2908FE(TE85L,F) from Toshiba Semiconductor and Storage, a top-tier pre-biased bipolar junction transistor (BJT) array in the Discrete Semiconductor Products category, specifically Transistors - Bipolar (BJT) - Arrays, Pre-Biased. This product is engineered for optimal performance in amplification and switching applications, offering high reliability and efficiency. The RN2908FE(TE85L,F) features built-in pre-biasing, which simplifies circuit design and enhances performance. Its superior thermal characteristics ensure stable operation across a wide temperature range. Ideal for use in automotive control modules, audio equipment, and power management systems, the RN2908FE(TE85L,F) delivers consistent and precise results. The transistor array is also commonly found in aerospace electronics, security systems, and wearable technology. With its high gain and low power consumption, the RN2908FE(TE85L,F) is perfect for energy-sensitive applications. The robust construction and long-term durability of this BJT array make it a smart investment for any project. To explore how the RN2908FE(TE85L,F) can meet your specific requirements, request a quote today and our experts will assist you promptly.

General specs

  • Product Status: Active
  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 22kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6

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