Shopping cart

Subtotal: $0.00

PDTA114YQCZ

Nexperia USA Inc.
PDTA114YQCZ Preview
Nexperia USA Inc.
PDTA114YQC/SOT8009/DFN1412D-3
$0.26
Available to order
Reference Price (USD)
1+
$0.26000
500+
$0.2574
1000+
$0.2548
1500+
$0.2522
2000+
$0.2496
2500+
$0.247
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Nexperia USA Inc. PDTA114YQCZ is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
PDTA114YQCZ

PDTA114YQCZ

$0.26

Product details

The PDTA114YQCZ pre-biased bipolar transistor by Nexperia USA Inc. combines switching speed and analog performance in a single cost-optimized package. Its innovative design minimizes storage time for clean pulse edges in digital applications while maintaining linearity for small-signal processing. Common implementations involve USB power delivery controllers, building security system interfaces, and drone motor drivers. The component's MSOP-8 package provides separate emitter and collector pins for layout flexibility. With 100% automated testing ensuring parameter compliance, this solution reduces incoming inspection overhead. Start your evaluation purchase PDTA114YQCZ evaluation kits directly from our authorized distributors with overnight shipping options.

General specs

  • Product Status: Obsolete
  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1): 10 kOhms
  • Resistor - Emitter Base (R2): 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA
  • Frequency - Transition: 180 MHz
  • Power - Max: 360 mW
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: 3-XDFN Exposed Pad
  • Supplier Device Package: DFN1412D-3

Viewed products

Rohm Semiconductor

DTC143TMFHAT2L

$0.00 (not set)
onsemi

DTC124XET1

$0.00 (not set)
Diodes Incorporated

DRDNB16W-7

$0.00 (not set)
Rohm Semiconductor

DTC143ZUBTL

$0.00 (not set)
Toshiba Semiconductor and Storage

RN2101MFV,L3F(CT

$0.00 (not set)
NTE Electronics, Inc

NTE2369

$0.00 (not set)
Rohm Semiconductor

DTA124EUBHZGTL

$0.00 (not set)
onsemi

MMUN2115LT1G

$0.00 (not set)
Toshiba Semiconductor and Storage

RN2311(TE85L,F)

$0.00 (not set)
Rohm Semiconductor

DTA014YMT2L

$0.00 (not set)
Top