DTC143ZUBTL
Rohm Semiconductor
Rohm Semiconductor
TRANS PREBIAS NPN 200MW UMT3F
$0.21
Available to order
Reference Price (USD)
3,000+
$0.03315
6,000+
$0.02990
15,000+
$0.02600
30,000+
$0.02340
75,000+
$0.02080
150,000+
$0.01820
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DTC143ZUBTL
$0.21
Product details
Optimized for space-constrained designs, the DTC143ZUBTL pre-biased BJT from Rohm Semiconductor integrates critical biasing elements into a single package. This surface-mount device exhibits minimal leakage currents and consistent hFE characteristics across production batches. Its primary use cases involve power management in wearable devices, interface circuits for industrial sensors, and driver stages in low-voltage displays. The transistor's lead-free construction complies with global environmental standards, while its matte tin plating enhances solderability. Designers appreciate its predictable behavior in temperature-varying conditions, making it suitable for outdoor electronics. Explore volume discounts submit your requirements via our online portal for customized offers.
General specs
- Product Status: Not For New Designs
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 4.7 kOhms
- Resistor - Emitter Base (R2): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: SC-85
- Supplier Device Package: UMT3F
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