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PBSS3515VS,115

Nexperia USA Inc.
PBSS3515VS,115 Preview
Nexperia USA Inc.
TRANS 2PNP 15V 0.5A SOT666
$0.45
Available to order
Reference Price (USD)
4,000+
$0.10230
8,000+
$0.09610
12,000+
$0.08990
28,000+
$0.08680
Exquisite packaging
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Nexperia USA Inc. PBSS3515VS,115 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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PBSS3515VS,115

PBSS3515VS,115

$0.45

Product details

Nexperia USA Inc.'s PBSS3515VS,115 stands as a superior choice in Bipolar Junction Transistor (BJT) Arrays within Discrete Semiconductor Products. This high-performance component combines multiple transistors with tightly controlled parameters in a single package. The PBSS3515VS,115 delivers exceptional current amplification with minimal variation between elements. Its design focuses on thermal equilibrium across all transistors for uniform performance. The product features low leakage currents and high breakdown voltage ratings. With its space-efficient packaging, it enables compact circuit designs without sacrificing capability. The PBSS3515VS,115 demonstrates excellent switching characteristics for both analog and digital applications. Its robust construction ensures reliability in challenging operating environments. Precision instrumentation benefits from its stable amplification characteristics. Motor drive circuits utilize its synchronized switching capabilities. Power conversion systems employ it for efficient energy management. The PBSS3515VS,115 also finds application in sophisticated control systems. Nexperia USA Inc. has implemented advanced quality assurance protocols in its manufacturing. The component's design facilitates effective heat dissipation in high-power scenarios. Its RoHS-compliant construction meets contemporary environmental standards. For engineers requiring reliable, high-performance transistor arrays, the PBSS3515VS,115 offers an excellent solution. Contact us today through our online platform to inquire about pricing and delivery options.

General specs

  • Product Status: Not For New Designs
  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V
  • Power - Max: 200mW
  • Frequency - Transition: 280MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-666

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