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ZDT6790TA

Diodes Incorporated
ZDT6790TA Preview
Diodes Incorporated
TRANS NPN/PNP 45V/40V 2A SM8
$1.20
Available to order
Reference Price (USD)
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$1.20000
500+
$1.188
1000+
$1.176
1500+
$1.164
2000+
$1.152
2500+
$1.14
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Diodes Incorporated ZDT6790TA is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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ZDT6790TA

ZDT6790TA

$1.20

Product details

The ZDT6790TA from Diodes Incorporated is a high-performance Bipolar Junction Transistor (BJT) Array designed for precision electronic applications. This product is part of the Discrete Semiconductor Products category, specifically optimized for circuits requiring multiple transistors in a compact package. Ideal for both industrial and commercial use, it ensures reliable performance and enhanced efficiency. The ZDT6790TA features excellent thermal stability and low noise operation, making it suitable for sensitive electronic environments. Its robust construction guarantees durability even in demanding conditions. With its advanced design, this BJT Array offers seamless integration into various circuit designs. Whether you're designing amplifiers, switches, or signal processors, the ZDT6790TA delivers consistent results. Its versatility extends to both analog and digital applications, providing flexibility for engineers. The product's compact form factor saves valuable board space without compromising performance. Trust Diodes Incorporated's expertise in semiconductor technology for your next project. Applications include audio amplification systems, power management modules, and sensor interfaces. For automotive electronics, it ensures reliable operation under varying temperatures. In consumer electronics, it enhances device performance and longevity. Industrial automation systems benefit from its high-speed switching capabilities. To get started with the ZDT6790TA, submit an online inquiry today for pricing and availability.

General specs

  • Product Status: Active
  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 45V, 40V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 1A, 750mV @ 50mA, 2A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 1A, 2V / 300 @ 10mA, 2V
  • Power - Max: 2.75W
  • Frequency - Transition: 150MHz, 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-223-8
  • Supplier Device Package: SM8

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