APT50GT120B2RDLG
Microsemi Corporation
Microsemi Corporation
IGBT 1200V 106A 694W TO-247
$18.81
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$19.91000
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APT50GT120B2RDLG
$18.81
Product details
Enhance your power control systems with the APT50GT120B2RDLG single IGBT transistor from Microsemi Corporation. This high-performance component is tailored for applications demanding efficient energy conversion and minimal heat generation. The APT50GT120B2RDLG is widely used in wind turbine inverters, HVAC systems, and medical power supplies, thanks to its exceptional reliability and fast response times. Its advanced architecture ensures low conduction losses and high switching frequencies, making it a top choice for modern power electronics. Whether you're upgrading existing systems or designing new ones, the APT50GT120B2RDLG offers the flexibility and performance you need. Submit your inquiry online to learn more about this versatile IGBT transistor.
General specs
- Product Status: Active
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 106 A
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
- Power - Max: 694 W
- Switching Energy: 3585µJ (on), 1910µJ (off)
- Input Type: Standard
- Gate Charge: 240 nC
- Td (on/off) @ 25°C: 23ns/215ns
- Test Condition: 800V, 50A, 4.7Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3 Variant
- Supplier Device Package: -
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