RJP30H1DPD-A0#Q2
Renesas Electronics America Inc
Renesas Electronics America Inc
IGBT
$1.36
Available to order
Reference Price (USD)
1+
$1.36000
500+
$1.3464
1000+
$1.3328
1500+
$1.3192
2000+
$1.3056
2500+
$1.292
Exquisite packaging
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RJP30H1DPD-A0#Q2
$1.36
Product details
Enhance your power control systems with the RJP30H1DPD-A0#Q2 single IGBT transistor from Renesas Electronics America Inc. This high-performance component is tailored for applications demanding efficient energy conversion and minimal heat generation. The RJP30H1DPD-A0#Q2 is widely used in wind turbine inverters, HVAC systems, and medical power supplies, thanks to its exceptional reliability and fast response times. Its advanced architecture ensures low conduction losses and high switching frequencies, making it a top choice for modern power electronics. Whether you're upgrading existing systems or designing new ones, the RJP30H1DPD-A0#Q2 offers the flexibility and performance you need. Submit your inquiry online to learn more about this versatile IGBT transistor.
General specs
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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