MSCSM170HM23CT3AG
Microchip Technology
Microchip Technology
PM-MOSFET-SIC-SBD-SP3F
$627.65
Available to order
Reference Price (USD)
1+
$627.65000
500+
$621.3735
1000+
$615.097
1500+
$608.8205
2000+
$602.544
2500+
$596.2675
Exquisite packaging
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MSCSM170HM23CT3AG
$627.65
Product details
General specs
- Product Status: Active
- FET Type: 4 N-Channel (Full Bridge)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1700V (1.7kV)
- Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
- Rds On (Max) @ Id, Vgs: 22.5mOhm @ 60A, 20V
- Vgs(th) (Max) @ Id: 3.2V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 356nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 1000V
- Power - Max: 602W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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