3N166 TO-99 6L
Linear Integrated Systems, Inc.
Linear Integrated Systems, Inc.
MONOLITHIC DUAL, P-CHANNEL ENHAN
$11.18
Available to order
Reference Price (USD)
1+
$11.18000
500+
$11.0682
1000+
$10.9564
1500+
$10.8446
2000+
$10.7328
2500+
$10.621
Exquisite packaging
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3N166 TO-99 6L
$11.18
Product details
Introducing the 3N166 TO-99 6L from Linear Integrated Systems, Inc., a high-performance MOSFET array in the Discrete Semiconductor Products category. Part of the Transistors - FETs, MOSFETs - Arrays subcategory, this product is designed for applications requiring robust power handling and efficient switching.\n\nThe 3N166 TO-99 6L offers features such as low gate charge, high current capability, and excellent thermal performance. The array format integrates multiple transistors, simplifying design and reducing component count. Its reliable construction ensures consistent operation in demanding environments.\n\nThis MOSFET array is widely used in home appliances, industrial drives, and telecommunications. Home appliances benefit from its energy efficiency and durability. Industrial drives utilize its high power handling for motor control. Telecommunications equipment relies on its fast switching for signal processing.\n\nReady to incorporate the 3N166 TO-99 6L into your projects? Submit an inquiry to get started. Our team is here to provide the support and information you need.
General specs
- Product Status: Active
- FET Type: 2 P-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
- Rds On (Max) @ Id, Vgs: 300Ohm @ 100µA, 20V
- Vgs(th) (Max) @ Id: 5V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 300mW (Ta)
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: TO-99-6 Metal Can
- Supplier Device Package: TO-99-6
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