MSCSM170AM039CD3AG
Microchip Technology
Microchip Technology
PM-MOSFET-SIC-SBD-D3
$1,510.74
Available to order
Reference Price (USD)
1+
$1510.74000
500+
$1495.6326
1000+
$1480.5252
1500+
$1465.4178
2000+
$1450.3104
2500+
$1435.203
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MSCSM170AM039CD3AG
$1,510.74
Product details
General specs
- Product Status: Active
- FET Type: 2 N Channel (Phase Leg)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1700V (1.7kV)
- Current - Continuous Drain (Id) @ 25°C: 523A (Tc)
- Rds On (Max) @ Id, Vgs: 5mOhm @ 270A, 20V
- Vgs(th) (Max) @ Id: 3.3V @ 22.5mA
- Gate Charge (Qg) (Max) @ Vgs: 1602nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 29700pF @ 1000V
- Power - Max: 2.4kW (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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