NXH040F120MNF1PTG
onsemi
onsemi
PIM F1 SIC FULL BRIDGE 1200V 40M
$113.79
Available to order
Reference Price (USD)
1+
$113.79000
500+
$112.6521
1000+
$111.5142
1500+
$110.3763
2000+
$109.2384
2500+
$108.1005
Exquisite packaging
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Product details
The NXH040F120MNF1PTG by onsemi is a cutting-edge MOSFET array in the Discrete Semiconductor Products category, specifically designed for Transistors - FETs, MOSFETs - Arrays. This product delivers exceptional performance in power switching applications, making it a preferred choice for engineers.\n\nThe NXH040F120MNF1PTG features low conduction losses, high switching frequency capability, and excellent thermal management. The array configuration allows for efficient PCB layout and reduced system complexity. Its reliable design ensures performance in a wide range of operating conditions.\n\nCommon applications include renewable energy inverters, industrial automation, and consumer power supplies. Renewable energy inverters benefit from its high efficiency and reliability. Industrial automation systems utilize its precision for control circuits. Consumer power supplies rely on its compact size and performance.\n\nDiscover the advantages of the NXH040F120MNF1PTG. Submit an inquiry today to learn more about availability and pricing. Our team is committed to supporting your project needs.
General specs
- Product Status: Active
- FET Type: 4 N-Channel
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 20V
- Vgs(th) (Max) @ Id: 4.3V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 122.1nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 1505pF @ 800V
- Power - Max: 74W (Tj)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: 22-PIM (33.8x42.5)
