MSCSM120TAM11CTPAG
Microchip Technology
Microchip Technology
PM-MOSFET-SIC-SBD~-SP6P
$1,138.84
Available to order
Reference Price (USD)
1+
$1138.84000
500+
$1127.4516
1000+
$1116.0632
1500+
$1104.6748
2000+
$1093.2864
2500+
$1081.898
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MSCSM120TAM11CTPAG
$1,138.84
Product details
General specs
- Product Status: Active
- FET Type: 6 N-Channel (3-Phase Bridge)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 251A (Tc)
- Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V
- Power - Max: 1.042kW (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP6-P
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