Shopping cart

Subtotal: $0.00

FF8MR12W2M1B11BOMA1

Infineon Technologies
FF8MR12W2M1B11BOMA1 Preview
Infineon Technologies
MOSFET 2N-CH 1200V AG-EASY2BM-2
$326.66
Available to order
Reference Price (USD)
1+
$233.75000
15+
$223.86933
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Infineon Technologies FF8MR12W2M1B11BOMA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
FF8MR12W2M1B11BOMA1

FF8MR12W2M1B11BOMA1

$326.66

Product details

The FF8MR12W2M1B11BOMA1 from Infineon Technologies is a high-performance MOSFET array designed for efficient power management in compact electronic systems. This product is part of the Discrete Semiconductor Products category, specifically under Transistors - FETs, MOSFETs - Arrays, offering reliable switching capabilities and low power dissipation. Ideal for applications requiring multiple FETs in a single package, the FF8MR12W2M1B11BOMA1 ensures enhanced circuit density and simplified design.\n\nKey features of the FF8MR12W2M1B11BOMA1 include optimized gate charge for fast switching, low on-resistance for reduced conduction losses, and excellent thermal performance. The array configuration allows for seamless integration into designs needing multiple transistors, saving board space and improving overall system efficiency. With robust construction and high reliability, this MOSFET array is suitable for demanding environments.\n\nThe FF8MR12W2M1B11BOMA1 is widely used in power supplies, motor control systems, and audio amplifiers. In power supplies, it enables efficient voltage regulation and energy conversion. For motor control, it provides precise switching for smooth operation. Audio amplifiers benefit from its low distortion and high fidelity performance.\n\nReady to integrate the FF8MR12W2M1B11BOMA1 into your next project? Submit an inquiry today to get pricing and availability details. Our team is here to assist with your procurement needs.

General specs

  • Product Status: Last Time Buy
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Silicon Carbide (SiC)
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 150A (Tj)
  • Rds On (Max) @ Id, Vgs: 7.5mOhm @ 150A, 15V (Typ)
  • Vgs(th) (Max) @ Id: 5.55V @ 60mA
  • Gate Charge (Qg) (Max) @ Vgs: 372nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 800V
  • Power - Max: 20mW (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-EASY2BM-2

Viewed products

Rohm Semiconductor

SH8J62TB1

$0.00 (not set)
Fairchild Semiconductor

FDMA1025P

$0.00 (not set)
Infineon Technologies

BSO211PH

$0.00 (not set)
Diodes Incorporated

DMN3401LDW-13

$0.00 (not set)
Rohm Semiconductor

SH8KB7TB1

$0.00 (not set)
Fairchild Semiconductor

FDW2516NZ

$0.00 (not set)
Infineon Technologies

IRF7904TRPBF

$0.00 (not set)
onsemi

FDMD8260L

$0.00 (not set)
Vishay Siliconix

SQJ202EP-T1_GE3

$0.00 (not set)
Infineon Technologies

IPB13N03LBG

$0.00 (not set)
Top