FF8MR12W2M1B11BOMA1
Infineon Technologies
Infineon Technologies
MOSFET 2N-CH 1200V AG-EASY2BM-2
$326.66
Available to order
Reference Price (USD)
1+
$233.75000
15+
$223.86933
Exquisite packaging
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| TNT | 2-6 days |
| EMS | 3-7 days |
Infineon Technologies FF8MR12W2M1B11BOMA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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FF8MR12W2M1B11BOMA1
$326.66
Product details
General specs
- Product Status: Last Time Buy
- FET Type: 2 N-Channel (Dual)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 150A (Tj)
- Rds On (Max) @ Id, Vgs: 7.5mOhm @ 150A, 15V (Typ)
- Vgs(th) (Max) @ Id: 5.55V @ 60mA
- Gate Charge (Qg) (Max) @ Vgs: 372nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 800V
- Power - Max: 20mW (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-EASY2BM-2
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