MSCSM120HM31CTBL2NG
Microchip Technology
Microchip Technology
PM-MOSFET-SIC-SBD-BL2
$313.41
Available to order
Reference Price (USD)
1+
$313.41000
500+
$310.2759
1000+
$307.1418
1500+
$304.0077
2000+
$300.8736
2500+
$297.7395
Exquisite packaging
Discount
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| EMS | 3-7 days |
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MSCSM120HM31CTBL2NG
$313.41
Product details
General specs
- Product Status: Active
- FET Type: 4 N-Channel (Full Bridge)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 79A
- Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
- Power - Max: 310W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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