MSCSM120DHM31CTBL2NG
Microchip Technology
Microchip Technology
PM-MOSFET-SIC-SBD-BL2
$195.93
Available to order
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$192.0114
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$188.0928
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$186.1335
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MSCSM120DHM31CTBL2NG
$195.93
Product details
The MSCSM120DHM31CTBL2NG from Microchip Technology is a high-efficiency MOSFET array in the Discrete Semiconductor Products category, part of the Transistors - FETs, MOSFETs - Arrays subcategory. This product is designed for applications requiring high power density and reliable performance.\n\nKey features of the MSCSM120DHM31CTBL2NG include low on-resistance, fast switching, and superior thermal characteristics. The array format integrates multiple transistors, simplifying design and saving board space. Its robust construction ensures durability in challenging environments.\n\nIdeal uses include electric vehicle power systems, industrial controls, and consumer electronics. Electric vehicle power systems benefit from its high current handling and efficiency. Industrial controls utilize its reliability for precise operation. Consumer electronics rely on its compact design and performance.\n\nEnhance your designs with the MSCSM120DHM31CTBL2NG. Request a quote today to explore how this MOSFET array can meet your requirements. Our team is here to provide the support you need.
General specs
- Product Status: Active
- FET Type: 2 N-Channel (Dual) Asymmetrical
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 79A
- Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
- Power - Max: 310W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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