NXH040P120MNF1PG
onsemi
onsemi
PIM F1 SIC HALFBRIDGE 1200V 40MO
$80.56
Available to order
Reference Price (USD)
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$80.56464
500+
$79.7589936
1000+
$78.9533472
1500+
$78.1477008
2000+
$77.3420544
2500+
$76.536408
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NXH040P120MNF1PG
$80.56
Product details
The NXH040P120MNF1PG by onsemi is a cutting-edge MOSFET array in the Discrete Semiconductor Products category, specifically designed for Transistors - FETs, MOSFETs - Arrays. This product delivers exceptional performance in power switching applications, making it a preferred choice for engineers.\n\nThe NXH040P120MNF1PG features low conduction losses, high switching frequency capability, and excellent thermal management. The array configuration allows for efficient PCB layout and reduced system complexity. Its reliable design ensures performance in a wide range of operating conditions.\n\nCommon applications include renewable energy inverters, industrial automation, and consumer power supplies. Renewable energy inverters benefit from its high efficiency and reliability. Industrial automation systems utilize its precision for control circuits. Consumer power supplies rely on its compact size and performance.\n\nDiscover the advantages of the NXH040P120MNF1PG. Submit an inquiry today to learn more about availability and pricing. Our team is committed to supporting your project needs.
General specs
- Product Status: Active
- FET Type: 2 N-Channel (Dual) Common Source
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 20V
- Vgs(th) (Max) @ Id: 4.3V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 122.1nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 1505pF @ 800V
- Power - Max: 74W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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