MSCSM120AM042CD3AG
Microchip Technology
Microchip Technology
PM-MOSFET-SIC-SBD~-D3
$990.06
Available to order
Reference Price (USD)
1+
$990.06000
500+
$980.1594
1000+
$970.2588
1500+
$960.3582
2000+
$950.4576
2500+
$940.557
Exquisite packaging
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MSCSM120AM042CD3AG
$990.06
Product details
General specs
- Product Status: Active
- FET Type: 2 N Channel (Phase Leg)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
- Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 6mA
- Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 18.1pF @ 1000V
- Power - Max: 2.031kW (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: D3
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