MSCSM170AM029CT6LIAG
Microchip Technology
Microchip Technology
PM-MOSFET-SIC-SBD-SP3F
$1,930.24
Available to order
Reference Price (USD)
1+
$1930.24000
500+
$1910.9376
1000+
$1891.6352
1500+
$1872.3328
2000+
$1853.0304
2500+
$1833.728
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
Microchip Technology MSCSM170AM029CT6LIAG is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
MSCSM170AM029CT6LIAG
$1,930.24
Product details
The MSCSM170AM029CT6LIAG by Microchip Technology is a versatile MOSFET array belonging to the Discrete Semiconductor Products family, specifically designed for Transistors - FETs, MOSFETs - Arrays. This product excels in applications requiring high-speed switching and efficient power handling, making it a go-to solution for modern electronics.\n\nNotable features of the MSCSM170AM029CT6LIAG include a balanced trade-off between switching speed and power dissipation, excellent noise immunity, and a compact footprint. The array configuration integrates multiple transistors, offering design flexibility and space savings. Its robust construction ensures long-term reliability in various operating conditions.\n\nThis MOSFET array is ideal for use in LED lighting, battery management systems, and communication devices. In LED lighting, it enables precise dimming and power control. Battery management systems rely on its efficiency for charge and discharge cycles. Communication devices benefit from its fast switching and low interference.\n\nElevate your projects with the MSCSM170AM029CT6LIAG. Submit an inquiry now to learn more about pricing and technical specifications. Our team is committed to providing the best solutions for your needs.
General specs
- Product Status: Active
- FET Type: 2 N Channel (Phase Leg)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1700V (1.7kV)
- Current - Continuous Drain (Id) @ 25°C: 676A (Tc)
- Rds On (Max) @ Id, Vgs: 3.75mOhm @ 360A, 20V
- Vgs(th) (Max) @ Id: 3.3V @ 30mA
- Gate Charge (Qg) (Max) @ Vgs: 2136nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 39600pF @ 1000V
- Power - Max: 3kW (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
Viewed products