MSCSM120AM027CD3AG
Microchip Technology
Microchip Technology
PM-MOSFET-SIC-SBD~-D3
$1,390.87
Available to order
Reference Price (USD)
1+
$1390.87000
500+
$1376.9613
1000+
$1363.0526
1500+
$1349.1439
2000+
$1335.2352
2500+
$1321.3265
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MSCSM120AM027CD3AG
$1,390.87
Product details
General specs
- Product Status: Active
- FET Type: 2 N Channel (Phase Leg)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 733A (Tc)
- Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 9mA
- Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 27000pF @1000V
- Power - Max: 2.97kW (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: D3
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