F415MR12W2M1B76BOMA1
Infineon Technologies
Infineon Technologies
LOW POWER EASY AG-EASY2B-2
$284.06
Available to order
Reference Price (USD)
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$284.06000
500+
$281.2194
1000+
$278.3788
1500+
$275.5382
2000+
$272.6976
2500+
$269.857
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F415MR12W2M1B76BOMA1
$284.06
Product details
The F415MR12W2M1B76BOMA1 from Infineon Technologies is a high-performance MOSFET array designed for efficient power management in compact electronic systems. This product is part of the Discrete Semiconductor Products category, specifically under Transistors - FETs, MOSFETs - Arrays, offering reliable switching capabilities and low power dissipation. Ideal for applications requiring multiple FETs in a single package, the F415MR12W2M1B76BOMA1 ensures enhanced circuit density and simplified design.\n\nKey features of the F415MR12W2M1B76BOMA1 include optimized gate charge for fast switching, low on-resistance for reduced conduction losses, and excellent thermal performance. The array configuration allows for seamless integration into designs needing multiple transistors, saving board space and improving overall system efficiency. With robust construction and high reliability, this MOSFET array is suitable for demanding environments.\n\nThe F415MR12W2M1B76BOMA1 is widely used in power supplies, motor control systems, and audio amplifiers. In power supplies, it enables efficient voltage regulation and energy conversion. For motor control, it provides precise switching for smooth operation. Audio amplifiers benefit from its low distortion and high fidelity performance.\n\nReady to integrate the F415MR12W2M1B76BOMA1 into your next project? Submit an inquiry today to get pricing and availability details. Our team is here to assist with your procurement needs.
General specs
- Product Status: Last Time Buy
- FET Type: 4 N-Channel (Half Bridge)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 75A (Tj)
- Rds On (Max) @ Id, Vgs: 15mOhm @ 75A, 15V
- Vgs(th) (Max) @ Id: 5.55V @ 30mA
- Gate Charge (Qg) (Max) @ Vgs: 186nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 5.52nF @ 800V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-EASY1B-2
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