MSC025SMA120J
Microchip Technology
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Microchip Technology
SICFET N-CH 1.2KV 77A SOT227
$52.14
Available to order
Reference Price (USD)
1+
$52.14000
500+
$51.6186
1000+
$51.0972
1500+
$50.5758
2000+
$50.0544
2500+
$49.533
Exquisite packaging
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Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 20 V
- Vgs (Max): +25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 1000 V
- FET Feature: -
- Power Dissipation (Max): 278W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227 (ISOTOP®)
- Package / Case: SOT-227-4, miniBLOC