SCT2280KEC
Rohm Semiconductor
Rohm Semiconductor
SICFET N-CH 1200V 14A TO247
$11.02
Available to order
Reference Price (USD)
1+
$10.02000
10+
$9.05200
25+
$8.63040
100+
$7.49380
360+
$7.15700
720+
$6.52550
1,080+
$5.89400
Exquisite packaging
Discount
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SCT2280KEC
$11.02
Product details
General specs
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 364mOhm @ 4A, 18V
- Vgs(th) (Max) @ Id: 4V @ 1.4mA
- Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 18 V
- Vgs (Max): +22V, -6V
- Input Capacitance (Ciss) (Max) @ Vds: 667 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 108W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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